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GAL22V10 Datasheet PDF

Part Series:GAL22V10 Series
Category:CPLDs
Description:SPLD GAL Family 10 Macro Cells 200MHz 5V 28Pin PLCC
Document:GAL22V10D-5LJ Datasheet PDF (29 Pages)

GAL22V10 CPLDs Datasheet PDF

#1
GAL22V10D-5LJ
2.5
Lattice Semiconductor
#2
GAL22V10D-10LJ
2.4
Lattice Semiconductor
#3
GAL22V10D-10LJN
2.4
Lattice Semiconductor
#4
GAL22V10D-7LJ
2.3
Lattice Semiconductor

GAL22V10 Datasheet PDF CPLDs

29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 200MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 38.5MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 38.5MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 38.5MHz 5V 24Pin PDIP
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
PLD; Programmable AND-Array Logic; 24Pin PDIP; -0.5 to V; 75mA; 0.8V, 25nS
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz 5V 24Pin PDIP
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz EECMOS Technology 5V 24Pin PDIP SPLD GAL Family 10 Macro Cells 83.3MHz EECMOS...
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz 5V 24Pin PDIP
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 83.3MHz 5V 28Pin PLCC
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 125MHz 5V 24Pin PDIP
29 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 38.5MHz 5V 24Pin PDIP
23 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 166MHz 5V 28Pin PLCC
23 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 125MHz 5V 24Pin PDIP
23 Pages
Lattice Semiconductor
SPLD GAL Family 10 Macro Cells 38.5MHz 5V 28Pin PLCC

GAL22V10D-5LJ - Lattice Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
200 MHz
Number of Pins
28 Pin
Case/Package
PLCC-28
Supply Current
140 mA
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GAL22V10D-5LJ - Lattice Semiconductor Function Overview

Description
The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
Features
• HIGH PERFORMANCE E2CMOS®TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS®Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA Typical Icc on Low Power Device
— 45mA Typical Icc on Quarter Power Device
•E2CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
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