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TCA9555 Datasheet PDF

Part Series:TCA9555 Series
Category:Interface ICs
Description:TEXAS INSTRUMENTS TCA9555PWR I/O Expander, 16Bit, 400kHz, I2C, SMBus, 1.65V, 5.5V, TSSOP
Document:TCA9555PWR Datasheet PDF (46 Pages)

TCA9555 Datasheet PDF Interface ICs

46 Pages
TI
1.65 to 5.5V 16Bit I2C and SMBus I/O Expander With Interrupt Output and Configuration Registers 24-SSOP -40℃ to 85℃

TCA9555PWR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
24 Pin
Supply Voltage (DC)
1.65V ~ 5.50V
Case/Package
TSSOP-24
Number of Outputs
16 Output
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TCA9555PWR Function Overview

The TCA9555PWR is a 16-bit I/O Expander for the two-line bidirectional bus (I²C) is designed for 1.65 to 5.5V VCC operation. It provides general-purpose remote I/O expansion for most microcontroller families via the I²C interface. The TCA9555 consists of two 8-bit configuration (input or output selection), input port, output port and polarity inversion (active high or active low operation) registers. At power on, the I/Os are configured as inputs. The system master can enable the I/Os as either inputs or outputs by writing to the I/O configuration bits. The data for each input or output is kept in the corresponding Input or Output register. The polarity of the Input Port register can be inverted with the Polarity Inversion register. Three hardware pins (A0, A1 and A2) are used to program the I²C address, which allows up to eight TCA9555 devices to share the same I²C bus or SMBus.
Open-drain active-low interrupt (INT)\ output
400kHz Fast I²C bus
Compatible with most microcontrollers
Configurable slave address with 3 address pins
Polarity inversion register
Latched outputs with high-current drive capability for directly driving LEDs
Latch-up performance exceeds 100mA per JESD 78, class II
3.5µA Maximum low standby-current consumption
5V Tolerant i/o ports
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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