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TXB0102 Datasheet PDF

Part Series:TXB0102 Series
Category:Logic ICs
Description:2Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15kV ESD Protect 8-VSSOP -40℃ to 85℃
Document:TXB0102DCUR Datasheet PDF (28 Pages)

TXB0102 Datasheet PDF Logic ICs

28 Pages
TI
2Bit Bidirectional Voltage-Level Shifter with Auto Direction Sensing and +/-15kV ESD Protect 8-VSSOP -40℃ to 85℃

TXB0102DCUR - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Supply Voltage (DC)
1.20V (min)
Case/Package
VSSOP-8
Number of Circuits
1 Circuit
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TXB0102DCUR - TI Function Overview

The TXB0102DCUR is a 2-bit Bidirectional Voltage-level Shifter with auto direction sensing and ±15kV ESD protect. This non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA and accepts any supply voltage from 1.2 to 3.6V. The B port is designed to track VCCB and accepts any supply voltage from 1.65 to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.2, 1.5, 1.8, 2.5, 3.3 and 5V voltage nodes. VCCA should not exceed VCCB. When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pull-down resistor. The minimum value of the resistor is determined by the current-sourcing capability of the driver.
1.2 to 3.6V on A port and 1.65 to 5.5V on B port (VCCA
VCC isolation feature - If either VCC input is at GND, all outputs are in the high-impedance state
OE input circuit referenced to VCCA
Low power consumption (4µA maximum ICC)
IOFF supports partial power-down-mode operation
Latch-up performance exceeds 100mA per JESD 78, class II
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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