| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 140 V |
| Current Rating | 600 mA |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 140 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 60 @10mA, 5V |
| hFE Max | 250 |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625mW Through Hole TO-92-3
Fairchild
10 Pages / 0.09 MByte
Fairchild
10 Pages / 0.32 MByte
ON Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Fairchild
Trans GP BJT NPN 140V 0.6A 3Pin TO-92
KEC(Korea Electronics)
EPITAXIAL PLANAR NPN TRANSISTOR
Central Semiconductor
Trans GP BJT NPN 140V 0.6A 3Pin TO-92 Box
Philips
NPN high-voltage transistors
NXP
Trans Npn 140V 0.6A To92 Trans Npn 140V 0.6A To92
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
