| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 230 V |
| Current Rating | 15.0 A |
| Case/Package | TO-3-3 |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| hFE Min | 80 @1A, 5V |
| hFE Max | 160 |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 20.5 mm |
| Size-Width | 5.2 mm |
| Size-Height | 26 mm |
| Operating Temperature | 150℃ (TJ) |
Thanks to Toshiba, your circuit can handle high levels of voltage using the NPN 2SC5200OQ general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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