| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| hFE Min | 80 @1A, 5V |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 20 mm |
| Size-Width | 5 mm |
| Size-Height | 26 mm |
| Operating Temperature | -50℃ ~ 150℃ (TJ) |
The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and suitable for many different applications.
● Excellent gain linearity for low THD
● Complement to the 2SA1943/FJL4215
● Wide SOA for reliable operation
● High power dissipation (150W)
● High frequency (30MHz)
● High voltage (VCEO = 250V)
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