| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 15 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BD239C is a 100V Silicon NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Well-controlled hFE parameter for increased reliability
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
ST Microelectronics
9 Pages / 0.24 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
25 Pages / 0.25 MByte
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