| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.0024 Ω |
| Polarity | N-Channel |
| Power Dissipation | 216 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 7.3 ns |
| Input Capacitance (Ciss) | 4680pF @20V(Vds) |
| Input Power (Max) | 216 W |
| Fall Time | 9.3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 259W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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