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VNP10N06-EDatasheet PDF
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VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
October 1997
BLOCK DIAGRAM (*)
TYPE V
clamp
R
DS(on)
I
lim
VND10N06
VND10N06-1
VNP10N06FI
VNK10N06FM
60 V
60 V
60 V
60 V
0.3 Ω
0.3 Ω
0.3 Ω
0.3 Ω
10 A
10 A
10 A
10 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ LOGIC LEVEL INPUT THRESHOLD
■ ESD PROTECTION
■ SCHMITT TRIGGER ON INPUT
■ HIGH NOISE IMMUNITY
DESCRIPTION
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
SOT82-FM
1
3
1
2
3
ISOWATT220
DPAK
TO-252
3
2
1
IPAK
TO-251
(∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
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