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VNP28N04Datasheet PDF
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September 2013 Doc ID 7381 Rev 4 1/33
1
VND1NV04
VNN1NV04 - VNS1NV04
OMNIFET II
fully autoprotected Power MOSFET
Features
■
Linear current limitation
■
Thermal shutdown
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
ESD protection
■
Direct access to the gate of the Power
MOSFET (analog driving)
■
Compatible with standard Power MOSFET
Description
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics
®
VIPower
®
M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Parameter Symbol Value
Max on-state resistance (per ch.) R
ON
250 mΩ
Current limitation (typ) I
LIMH
1.7 A
Drain-source clamp voltage V
CLAMP
40 V
1
3
TO-252 (DPAK)
SOT-223
SO-8
1
2
2
3
Table 1. Device summary
Package
Order codes
Tube Tube (lead free) Tape and reel Tape and reel (lead free)
TO-252 (DPAK) VND1NV04 VND1NV04-E VND1NV0413TR VND1NV04TR-E
SOT-223 VNN1NV04 - VNN1NV0413TR -
SO-8 VNS1NV04 - VNS1NV0413TR -
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