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VNP28N04FI
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VNP28N04FI
VNB28N04/VNV28N04
OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
BLOCK DIAGRAM ()
TYPE V
clamp
R
DS(o n )
I
lim
VNP28N04FI
VNB28N04
VNV28N04
42 V
42 V
42 V
0.035 Ω
0.035 Ω
0.035 Ω
28 A
28 A
28 A
LINEAR CURRENT LIMITATION
THERMAL SHUTDOWN
SHORTCIRCUIT PROTECTION
INTEGRATEDCLAMP
LOW CURRENT DRAWNFROM INPUT PIN
DIAGNOSTIC FEEDBACKTHROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWERMOSFET (ANALOGDRIVING)
COMPATIBLEWITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP28N04FI, VNB28N04 and VNV28N04
are monolithic devices made using
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
enviroments.
Faultfeedbackcan be detected by monitoringthe
voltageat theinput pin.
1
10
PowerSO-10
1
2
3
1
3
D2PAK
TO-263
ISOWATT220
®
1/13
()PowerSO-10PinConfiguration:INPUT=6,7,8,9,10;SOURCE=1,2,4,5;DRAIN=TAB
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VNP28N04FI Documents

ST Microelectronics
13 Pages / 0.21 MByte
ST Microelectronics
13 Pages / 0.13 MByte

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