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VNP5N07FIDatasheet PDF
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December 2008 Rev 3 1/24
24
VND5N07
OMNIFET II
fully autoprotected Power MOSFET
Features
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ Esd protection
■ Direct access to the gate of the power mosfet
(analog driving)
■ Compatible with standard Power MOSFET
Description
The VND5N07 is a monolithic device designed in
STMicroelectronics VIPower M0 technology,
intended for replacement of standard Power
MOSFETs from DC to 50KHz applications. Built in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Max. on-state resistance (per ch.) R
DS (on)
0.2Ω
Current limitation (typ) I
LIMH
5 A
Drain-Source clamp voltage V
CLAMP
70V
1
3
3
2
1
DPAK
TO-252
IPAK
TO-251
SOT-82FM
ISOWATT200
Table 1. Device summary
Package
Order codes
Tube Tape and reel
DPAK VND5N07 VND5N0713TR
IPAK VND5N07-1
ISOWATT220 VNP5N07FI
SOT-82FM VNK5N07FM
www.st.com
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