| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 290000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 45 ns |
| Input Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.6 mm |
| Size-Width | 4.7 mm |
| Size-Height | 20.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● High Current Capability
● Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
● High Input Impedance
● Fast switching: EOFF =8uJ/A
● RoHS compliant
ON Semiconductor
9 Pages / 1.16 MByte
ON Semiconductor
11 Pages / 1.19 MByte
ON Semiconductor
2 Pages / 0.05 MByte
Fairchild
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 349000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 600V 80A 290000mW 3Pin(3+Tab) TO-247 Rail
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