| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262 |
| Power Rating | 330 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0018 Ω |
| Polarity | N-Channel |
| Power Dissipation | 330 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 280A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 6450pF @25V(Vds) |
| Fall Time | 130 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 330 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Material | Silicon |
| Size-Height | 10.54 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRF2804LPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
● Advanced process technology
● Ultra-low ON-resistance
● Fast switching
● Repetitive avalanche allowed up to Tjmax
Infineon
12 Pages / 0.39 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
International Rectifier
MOSFET N-CH 40V 75A TO-220AB
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 1.8Milliohms; ID 280A; TO-220AB; PD 330W; -55de
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
