| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 110 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 6.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 170 W |
| Part Family | IRF3205Z |
| Input Capacitance | 3450pF @25V |
| Gate Charge | 110 nC |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Rise Time | 95.0 ns |
| Input Capacitance (Ciss) | 3450pF @25V(Vds) |
| Input Power (Max) | 170 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF
● Advanced process technology
● Ultra low on-resistance
● 150 °C operating temperature
● Fast switching
● Repetitive avalanche allowed up to Tjmax
● Lead-free
●Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature
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MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S
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