| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -19.0 A |
| Case/Package | TO-220 |
| Polarity | P-Channel |
| Power Dissipation | 68.0 W |
| Part Family | IRF9Z34N |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Continuous Drain Current (Ids) | -19.0 A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 620pF @25V(Vds) |
| Fall Time | 41 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 68000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
9 Pages / 0.11 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.25 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET P-CH 60V 18A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 60V 18A TO-220AB
Infineon
Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
