| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | D2PAK-263 |
| Drain to Source Resistance (on) (Rds) | 0.14 Ω |
| Polarity | P-Channel |
| Power Dissipation | 88 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | -18.0 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 1100pF @25V(Vds) |
| Fall Time | 58 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.7 W |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
DESCRIPTION
●Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
●FEATURES
●• Advanced Process Technology
●• Surface Mount (IRF9Z34S/SiHF9Z34S)
●• Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L)
●• 175 °C Operating Temperature
●• Fast Switching
●• P-Channel
●• Fully Avalanche Rated
●• Lead (Pb)-free Available
Vishay Semiconductor
9 Pages / 0.19 MByte
Vishay Semiconductor
10 Pages / 0.18 MByte
Vishay Semiconductor
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