| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 88 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0165 Ω |
| Polarity | N-CH |
| Power Dissipation | 107 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1696pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 53A |
| Rise Time | 76 ns |
| Input Capacitance (Ciss) | 1696pF @25V(Vds) |
| Input Power (Max) | 107 W |
| Fall Time | 57 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 107W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFZ46NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
Infineon
8 Pages / 0.21 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.19 MByte
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1 Pages / 0.14 MByte
International Rectifier
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 50V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
New Jersey Semiconductor
Trans MOSFET N-CH 50V 50A 3Pin(3+Tab) TO-220ABO
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Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
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