| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 0.4 MHz |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 11.5V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 50ns, 30ns |
| Number of Outputs | 2 Output |
| Number of Positions | 8 Position |
| Power Dissipation | 0.75 W |
| Rise Time | 50 ns |
| Output Current (Max) | 0.65 A |
| Fall Time | 30 ns |
| Fall Time (Max) | 30 ns |
| Fall Time (Max) | 50 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -45 ℃ |
| Power Dissipation (Max) | 750 mW |
| Supply Voltage | 14.6V ~ 16.6V |
| Supply Voltage (Max) | 16.6 V |
| Supply Voltage (Min) | 11.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.25 mm |
| Operating Temperature | -45℃ ~ 125℃ (TJ) |
The L6384ED is a High-voltage Gate Driver, manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT devices. This device has one input pin, one enable pin (DT/SD) and two output pins and guarantees matched delays between low-side and high-side sections, thus simplifying device"s high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
● 600V High voltage rail
● dV/dt Immunity ±50V/nsec in full temperature range
● 400mA Source current
● 650mA Sink current
● Switching times 50/30ns rise/fall with 1nF load
● Shutdown input
● Dead time setting
● Under voltage lockout
● Integrated bootstrap diode
● Clamping on VCC
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