| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 2 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 75 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 20 @4A, 4V |
| hFE Max | 70 |
| Input Power (Max) | 75 W |
| DC Current Gain (hFE) | 400 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the MJE2955T
● Well-controlled hFE parameter for increased reliability
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