| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -500 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 25 @30mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Material | Silicon |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this PNP MPSA92ZL1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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TRANS PNP 300V 0.5A TO-92
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