| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package (SI) | 1608 |
| Case/Package | 0603 |
| Number of Positions | 2 Position |
| Forward Voltage | 480mV @2A |
| Power Dissipation | 586 mW |
| Thermal Resistance | 213℃/W (RθJA) |
| Forward Current | 2 A |
| Max Forward Surge Current (Ifsm) | 28 A |
| Maximum Forward Voltage (Max) | 480 mV |
| Forward Current (Max) | 2 A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature | 150℃ (Max) |
| Power Dissipation (Max) | 1560 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.6 mm |
| Size-Width | 0.8 mm |
| Operating Temperature | -40℃ ~ 150℃ |
The NSR20F30NXT5G is a Schottky Barrier Diode. It is optimized for low forward voltage drop and low leakage current and are offered in a chip scale package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
● Very low forward voltage drop (480mV at 2.0A)
● Low reverse current (20A at 10V VR)
● 665mW Power dissipation
● Very high switching speed
● Halogen-free
ON Semiconductor
3 Pages / 0.08 MByte
ON Semiconductor
202 Pages / 0.61 MByte
ON Semiconductor
2 Pages / 0.04 MByte
ON Semiconductor
Schottky Barrier Diode, 30V, 2A, Low IR DSN2 0603 Schottky Diode 30V 2A, DSN2, 1.6x0.8, 0.9P (0603), 5000-DSFTP
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