| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -2.00 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
Do you need a device that can yield much higher current gains? Thanks to STMicroelectronics, the PNP TIP117 Darlington transistor can amplify a current to meet your needs. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
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