| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 0.35 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -185 mA |
| Input Capacitance (Ciss) | 23pF @25V(Vds) |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 3000 |
The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers.
● Low ON-resistance
● High-side switching
● Low threshold
● 20ns Fast switching speed
● 20pF low input capacitance
● 2000V ESD protection
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