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2N2369 Pinout Diagram

Part Series:2N2369 Series
Category:BJTs
Description:Bipolar (BJT) Single Transistor, Switching, NPN, 15V, 500MHz, 360mW, 200mA, 40 hFE
Document:2N2369AUB (4 Pages)

2N2369 BJTs Pinout Diagram

#1
2N2369AUB
0.9
Microsemi
#2
2N2369AUA
0.5
Microsemi
#3
2N2369
1.5
Multicomp
#4
2N2369A
1.3
Multicomp

2N2369 - Multicomp Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-18
Number of Positions
3 Position
Polarity
NPN
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2N2369 - Multicomp Function Overview

The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
Collector emitter voltage (Vce) of 15V
Continuous collector current (Ic) of 200mA
Power dissipation of 360mW
Operating junction temperature range from -65°C to 200°C
Collector emitter saturation voltage is less than 250mV at Ic=10mA
DC current gain is greater than 20 at Ic=100mA
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