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2N2484 Datasheet PDF

Part Series:2N2484 Series
Category:BJTs
Description:Trans GP BJT NPN 60V 0.05A 3Pin TO-18
Document:2N2484 Datasheet PDF (6 Pages)

2N2484 BJTs Datasheet PDF

#1
2N2484
1.5
Microsemi
#2
2N2484UB
1.1
Microsemi
#3
2N2484
1.2
Central Semiconductor
#4
2N2484UA
0.4
Microsemi

2N2484 Datasheet PDF BJTs

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2N2484 - Microsemi Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-18
Power Dissipation
0.36 W
Breakdown Voltage (Collector to Emitter)
60 V
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2N2484 - Microsemi Function Overview

●Use this versatile NPN 2N2484 GP BJT from Microsemi to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
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