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2N6036 Datasheet PDF

Part Series:2N6036 Series
Category:BJTs
Description:Trans Darlington PNP 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Document:2N6036 Datasheet PDF (11 Pages)

2N6036 BJTs Datasheet PDF

#1
2N6036
2.2
ST Microelectronics
#2
2N6036
1.5
ON Semiconductor
#3
2N6036G
3.7
ON Semiconductor

2N6036 - ST Microelectronics Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-4.00 A
Case/Package
TO-126-3
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2N6036 - ST Microelectronics Function Overview

Compared to other transistors, the PNP 2N6036 Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@4mA@4A V. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
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