2N6286 Datasheet PDF

2.5

ON Semiconductor

1.1

ON Semiconductor

0.6

Microsemi

2N6286 - ON Semiconductor Specifications

TYPE

DESCRIPTION

Case/Package

TO-204-2

Polarity

PNP

Power Dissipation

160 W

Breakdown Voltage (Collector to Emitter)

80 V

Continuous Collector Current

20A

●The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.

●Features

●---

● |

● High DC Current Gain @ IC = 10 Adc

●hFE = 2400 (Typ) - 2N6284

●hFE = 4000 (Typ) - 2N6287

● Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)

● Monolithic Construction with Built-In Base-Emitter Shunt Resistors

● Pb-Free Packages are Available

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