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2N6338 Datasheet PDF

Part Series:2N6338 Series
Category:BJTs
Description:TO-204-2 NPN 100V 25A
Document:2N6338G Datasheet PDF (6 Pages)

2N6338 BJTs Datasheet PDF

2N6338 - ON Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
100 V
Current Rating
25.0 A
Case/Package
TO-204
Polarity
NPN
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2N6338 - ON Semiconductor Function Overview

The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
Features
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High Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) 2N6338
VCEO(sus) = 150 Vdc (Min) - 2N6341
High DC Current Gain
hFE = 30 - 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ts = 1.0 µs (Max)
tf = 0.25 µs (Max)
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
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