2N6667 Datasheet PDF

●Darlington Silicon Power Transistors

●Designed for general−purpose amplifier and low speed switching applications.

●• High DC Current Gain −

●   hFE = 3500 (Typ) @ IC = 4.0 Adc

●• Collector−Emitter Sustaining Voltage − @ 200 mAdc

●   VCEO(sus) = 60 Vdc (Min) − 2N6667

●                  = 80 Vdc (Min) − 2N6668

●• Low Collector−Emitter Saturation Voltage −

●   VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc

●• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

●• TO−220AB Compact Package

●• Complementary to 2N6387, 2N6388

●• These Devices are Pb−Free and are RoHS Compliant