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2SC3357 Datasheet PDF

Part Series:2SC3357 Series
Category:BJTs
Description:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Document:2SC3357-T1-A Datasheet PDF (13 Pages)

2SC3357 BJTs Datasheet PDF

#1
2SC3357-T1-A
0.9
California Eastern Laboratories
#2
2SC3357-T1
1.5
NEC
#3
2SC3357
1.3
NEC
#4
2SC3357-A
0.6
California Eastern Laboratories

2SC3357 - NEC Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-89
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2SC3357 - NEC Function Overview

●DESCRIPTION
●The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
●FEATURES
●• Low Noise and High Gain
●  NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz
●  NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, IC= 40 mA, f = 1.0 GHz
●• Large PTin Small Package
●  PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
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