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BFP650 Datasheet PDF

Part Series:BFP650 Series
Category:BJTs
Description:Digital Transistors \\- NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
Document:BFP650H6327XTSA1 Datasheet PDF (30 Pages)

BFP650 Datasheet PDF BJTs

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BFP650 - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-343-4
Power Rating
0.5 W
Breakdown Voltage (Collector to Emitter)
4.5 V
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BFP650 - Infineon Function Overview

Summary of Features:
Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
Based on Infineon´s reliable, high volume SiGe:C wafer technology
Easy to use Pb-free (RoHS compliant) standard package with visible leads
Qualification report according to AEC-Q101 available
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