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BSH108 Datasheet PDF

Part Series:BSH108 Series
Description:TO-236AB N-CH 30V 1.9A
Document:BSH108,215 Datasheet PDF (13 Pages)

BSH108 Datasheet PDF

#1
BSH108,215
2.3
Nexperia
#2
BSH108
1.1
NXP
#3
BSH108,215
0.8
NXP

BSH108 - NXP Specifications

TYPE
DESCRIPTION
Case/Package
SOT-23
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
1.9A
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BSH108 - NXP Function Overview

●N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package
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