BSS123 Datasheet PDF

●This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

●Features

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● 0.17 A, 100 V, RDS(ON) = 6 Ω @ VGS = 10 V

● 0.17 A, 100 V, RDS(ON) = 10 Ω @ VGS = 4.5 V

● High Density Cell Design for Extremely Low RDS(ON)

● Rugged and Reliable

● Compact Industry Standard SOT-23 Surface Mount Package