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CY62128 Datasheet PDF

Part Series:CY62128 Series
Category:RAM Memory
Description:CYPRESS SEMICONDUCTOR CY62128ELL-45SXI IC, SRAM, 1Mbit, 128K x 8Bit, 45ns Access Time, Parallel Interface, 4.5V to 5.5V supply, SOIC-32
Document:CY62128ELL-45SXI Datasheet PDF (21 Pages)

CY62128 RAM Memory Datasheet PDF

CY62128 Datasheet PDF RAM Memory

20 Pages
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IC, SRAM, 1Mbit, 128K x 8Bit, 45ns Access Time, Parallel Interface, 2.2V to 3.6V supply, TSOP-32
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CY62128ELL-45SXI - Cypress Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
32 Pin
Supply Voltage (DC)
5.00 V, 5.50 V (max)
Case/Package
SOIC-32
Supply Current
16 mA
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CY62128ELL-45SXI - Cypress Semiconductor Function Overview

The CY62128ELL-45SXI is a 1MB high performance CMOS Static Random Access Memory (SRAM) organized as 128K words by 8-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled or a write operation is in progress. To write to the device, take chip enable and write enable inputs LOW. To read from the device, take chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins.
Very high speed - 45ns
Pin compatible with CY62128B
Ultralow standby power
Ultralow active power
Easy memory expansion with CE1, CE2 and OE
Automatic power down when deselected
CMOS for optimum speed/power
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