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FDN337 Datasheet PDF

Part Series:FDN337 Series
Category:MOSFETs
Description:FAIRCHILD SEMICONDUCTOR FDN337N MOSFET Transistor, N Channel, 2.2A, 30V, 0.054Ω, 4.5V, 700mV
Document:FDN337N Datasheet PDF (8 Pages)

FDN337 MOSFETs Datasheet PDF

FDN337N - Fairchild Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
2.20 A
Case/Package
SOT-23-3
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FDN337N - Fairchild Function Overview

The FDN337N from Fairchild is N channel logic level enhancement mode power field effect transistor in superSOT-3 package. This transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology, very high density process is especially tailored to minimize on state resistance, thus suite for low voltage applications in notebook computers, portable phones, PCMCIA cards and other battery powered circuits where fast switching and low inline power loss are needed in a very small outline surface mount package.
High density cell design for extremely low Rds(on)
Exceptional on resistance and maximum DC current capability
Drain to source voltage (Vds) of 30V
Gate to source voltage of ±8V
Low on state resistance of 65mohm at Vgs 4.5V
Continuous drain current of 2.2A
Maximum power dissipation of 500mW
Operating junction temperature range from -55°C to 150°C
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