●Description
●The FM24C64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A
●ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
●Features
●64K bit Ferroelectric Nonvolatile RAM
●Organized as 8,192 x 8 bits
●High Endurance 1 Trillion (1012) Read/Writes
●38 Year Data Retention
●NoDelay™ Writes
●Advanced High-Reliability Ferroelectric Process
●Fast Two-wire Serial Interface
●Up to 1 MHz maximum bus frequency
●Direct hardware replacement for EEPROM
●Supports legacy timing for 100 kHz & 400 kHz
●Low Power Operation
●5V operation
●100 µA Active Current (100 kHz)
●4 µA (typ.) Standby Current
●Industry Standard Configuration
●Industrial Temperature -40 C to +85 C
●8-pin “Green”/RoHS SOIC (-G)
