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IKW50N60H3 Datasheet PDF

Part Series:IKW50N60H3 Series
Category:IGBTs
Description:Trans IGBT Chip N-CH 600V 100A 333000mW 3Pin(3+Tab) TO-247 Tube
Document:IKW50N60H3 Datasheet PDF (16 Pages)

IKW50N60H3 IGBTs Datasheet PDF

IKW50N60H3 - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
333 W
Number of Positions
3 Position
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IKW50N60H3 - Infineon Function Overview

Summary of Features:
Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom
Benefits:
Excellent cost/performance
Low switching and conduction losses
Very good EMI behavior
A small gate resistor for reduced delay time and voltage overshoot
Smaller die sizes -> smaller packages
Best-in-class IGBT efficiency and EMI behavior
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