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IRF1010 Datasheet PDF

Part Series:IRF1010 Series
Category:MOSFETs
Description:TO-220AB N-CH 60V 84A
Document:IRF1010EZSTRLP Datasheet PDF (15 Pages)

IRF1010 MOSFETs Datasheet PDF

#1
IRF1010EZSTRLP
2.6
Infineon
#2
IRF1010EZPBF
3.5
Infineon
#3
IRF1010ZSTRLPBF
2.5
Infineon
#4
IRF1010ZPBF
2.4
Infineon

IRF1010 Datasheet PDF MOSFETs

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More IRF1010 Datasheet PDF >

IRF1010EPBF - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
170 W
Number of Positions
3 Position
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IRF1010EPBF - Infineon Function Overview

●The IRF1010EPBF is a 60V single N-channel HEXFET Power MOSFET with advanced process technology. Advanced HEXFET® power MOSFET from International rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra low on-resistance
● Dynamic dv/dt rating
● Fast switching
● Fully avalanche rated
● Industry-leading quality
● Planar MOSFET technology
● ±20V Gate to source voltage
● 1.4W/°C Linear derating factor
● 50A Avalanche current (IAR)
● 0.75°C/W Thermal resistance, junction to case
● 62°C/W Thermal resistance, junction to ambient
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