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IRF2204 Datasheet PDF

Part Series:IRF2204 Series
Category:MOSFETs
Description:40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Document:IRF2204LPBF Datasheet PDF (13 Pages)

IRF2204 MOSFETs Datasheet PDF

IRF2204 Datasheet PDF MOSFETs

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IRF2204 - International Rectifier Specifications

TYPE
DESCRIPTION
Polarity
N-Channel
Power Dissipation
330 W
Part Family
IRF2204
Breakdown Voltage (Drain to Source)
40.0 V
Continuous Drain Current (Ids)
210 A
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IRF2204 - International Rectifier Function Overview

Description
Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
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