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IRF2907 Datasheet PDF

Part Series:IRF2907 Series
Category:MOSFETs
Description:TO-220AB N-CH 75V 170A
Document:IRF2907ZPBF Datasheet PDF (13 Pages)

IRF2907 MOSFETs Datasheet PDF

IRF2907 Datasheet PDF MOSFETs

12 Pages
Infineon
D2PAK N-CH 75V 170A
12 Pages
International Rectifier
Trans MOSFET N-CH 75V 170A 3Pin(3+Tab) TO-220AB Tube
12 Pages
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3 Milliohms; ID 160A; D2Pak; PD 300W; VGS +/-20V
12 Pages
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3.5Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
12 Pages
International Rectifier
Trans MOSFET N-CH 75V 170A 3Pin(3+Tab) TO-262
12 Pages
Infineon
TO-262 N-CH 75V 170A
12 Pages
International Rectifier
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
12 Pages
Infineon
D2PAK N-CH 75V 170A
12 Pages
Infineon
TO-220AB N-CH 75V 170A
10 Pages
International Rectifier
Trans MOSFET N-CH 75V 180A 7Pin(6+Tab) D2PAK T/R

IRF2907ZPBF - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
330 W
Number of Positions
3 Position
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IRF2907ZPBF - Infineon Function Overview

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Repetitive avalanche allowed up to Tjmax
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