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IRF630 Datasheet PDF

Part Series:IRF630 Series
Category:MOSFETs
Description:N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
Document:IRF630 Datasheet PDF (14 Pages)

IRF630 MOSFETs Datasheet PDF

IRF630 Datasheet PDF MOSFETs

14 Pages
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International Rectifier
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TO-252-3 N-CH 200V 9A 400mΩ
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International Rectifier
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Vishay Semiconductor
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IRF630 - ST Microelectronics Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
9.00 A
Case/Package
TO-220-3
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IRF630 - ST Microelectronics Function Overview

The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company"s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
Drain to source voltage (Vds) is 200V
Gate to source voltage of ±20V
Continuous drain current (Id) is 9A
Power dissipation (Pd) is 75W
Operating junction temperature range from -65°C to 150°C
Gate threshold voltage of 3V
Low on state resistance of 350mohm at Vgs 10V
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