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IRF7311 Datasheet PDF

Part Series:IRF7311 Series
Description:20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Document:IRF7311TRPBF Datasheet PDF (10 Pages)

IRF7311 Datasheet PDF

IRF7311 Datasheet PDF

7 Pages
International Rectifier
Trans MOSFET N-CH 20V 6.6A 8Pin SOIC Tube
7 Pages
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
7 Pages
International Rectifier
Trans MOSFET N-CH Si 20V 6.6A 8Pin SOIC T/R
7 Pages
Infineon
SOIC N-CH 20V 6.6A

IRF7311 - International Rectifier Function Overview

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Generation V Technology
• Ultra Low On-Resistance
• Dual N-Channel MOSFET
• Surface Mount
• Fully Avalanche Rated
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