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IRFB5620 Datasheet PDF

Part Series:IRFB5620 Series
Category:MOSFETs
Description:TO-220AB N-CH 200V 25A
Document:IRFB5620PBF Datasheet PDF (10 Pages)

IRFB5620 MOSFETs Datasheet PDF

IRFB5620PBF - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
144 W
Number of Positions
3 Position
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IRFB5620PBF - Infineon Function Overview

The IRFB5620PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for full-bridge and push-pull application.
Low RDS (ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low QRR for better THD and lower EMI
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