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IRFBE30 Datasheet PDF

Part Series:IRFBE30 Series
Category:MOSFETs
Description:MOSFET N-CH 800V 4.1A TO-220AB
Document:IRFBE30SPBF Datasheet PDF (11 Pages)

IRFBE30 MOSFETs Datasheet PDF

IRFBE30 Datasheet PDF MOSFETs

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VISHAY
TO-220AB N-CH 800V 4.1A
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MOSFET N-CH 800V 4.1A TO-220AB
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Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
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Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V
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International Rectifier
Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab
9 Pages
Vishay Siliconix
Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB
8 Pages
Vishay Semiconductor
VISHAY IRFBE30SPBF Power MOSFET, N Channel, 4.1A, 800V, 3Ω, 10V, 4V
8 Pages
Vishay Semiconductor
VISHAY IRFBE30LPBF Power MOSFET, N Channel, 4.1A, 800V, 3Ω, 10V, 4V
8 Pages
Vishay Semiconductor
Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK T/R
6 Pages
International Rectifier
800V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagel

IRFBE30 - International Rectifier Specifications

TYPE
DESCRIPTION
Voltage Rating (DC)
800 V
Current Rating
4.10 A
Drain to Source Resistance (on) (Rds)
3.00 Ω
Polarity
N-Channel
Power Dissipation
125 W
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IRFBE30 - International Rectifier Function Overview

Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
O Dynamic dv/dt Rating
O Repetitive Avalanche Rated
O Fast Switching
O Ease of Paralleling
O Simple Drive Requirements
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