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IRFP4229 Datasheet PDF

Part Series:IRFP4229 Series
Category:MOSFETs
Description:TO-247AC N-CH 250V 44A
Document:IRFP4229PBF Datasheet PDF (9 Pages)

IRFP4229 MOSFETs Datasheet PDF

IRFP4229PBF - Infineon Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Rating
310 W
Number of Positions
3 Position
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IRFP4229PBF - Infineon Function Overview

The IRFP4229PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low EPULSE rating to reduce power dissipation
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability
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