IRLR2905 Pinout Diagram

●The IRLR2905TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

● Logic level gate drive

● Advanced process technology

● Fully avalanche rating

● Low static drain-to-source ON-resistance

● Dynamic dV/dt rating