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IXFH58N20 Datasheet PDF

Part Series:IXFH58N20 Series
Category:MOSFETs
Description:TO-247AD N-CH 200V 58A
Document:IXFH58N20 Datasheet PDF (4 Pages)
Updated Time: 2023/09/27 11:06:54 (UTC + 8)

IXFH58N20 MOSFETs Datasheet PDF

#1
IXFH58N20
3.0
IXYS Semiconductor
#2
IXFH58N20Q
1.6
IXYS Semiconductor

IXFH58N20 - IXYS Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
58.0 A
Case/Package
TO-247-3
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IXFH58N20 - IXYS Semiconductor Function Overview

●The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
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