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K4S561632 Datasheet PDF

Part Series:K4S561632 Series
Category:RAM Memory
Description:16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM
Document:K4S561632E-UC75 Datasheet PDF (14 Pages)

K4S561632 RAM Memory Datasheet PDF

K4S561632E-UC75 - Samsung Specifications

TYPE
DESCRIPTION
Number of Pins
54 Pin
Case/Package
TSOP
Clock Speed
133 MHz
Number of Bits
16 Bit
Access Time
7.50 ns
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K4S561632E-UC75 - Samsung Function Overview

GENERAL DESCRIPTION
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG"s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• 54 TSOP(II) Pb-free Package
• RoHS compliant
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