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K9F5608 Datasheet PDF

Part Series:K9F5608 Series
Category:Flash Memory
Description:Flash Mem Parallel 3.3V 256M-Bit 32M x 8 10us 48Pin TSOP
Document:K9F5608U0C-PCB0 Datasheet PDF (39 Pages)

K9F5608 Flash Memory Datasheet PDF

K9F5608U0C-PCB0 - Samsung Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
48 Pin
Case/Package
TSOP
Supply Voltage
3.3 V
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K9F5608U0C-PCB0 - Samsung Function Overview

GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.  The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even thewrite intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
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